Room temperature saturated polarization in BiFeO3 film by a simple chemical solution deposition method

A BiFeO3 film has been deposited on the Pt/Ti/SiO2/Si substrate by a simple chemical solution deposition method annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and highly (1 0 0) preferentially oriented with no impure phase. A room temperature saturated hysteresis loop was observed with a remanent polarization of ∼66 µC cm−2 after applying an electric field of 916 kV cm−1. Results of the dielectric property showed that the film has a large dielectric constant and quite a low dielectric loss; the dielectric constant and the dielectric loss were 217.9 and 0.0093 at 1 MHz, respectively. Moreover, low leakage was observed at room temperature. Under a biased electric field of 500 kV cm−1, the leakage current densities were identified as ∼10−7–10−6 A cm−2.