Raman efficiency measurements of graphite

Abstract The Raman efficiency of graphite, germanium and silicon have been measured at room temperature with 5145 A laser excitation. The efficiencies were determined from a comparison with the 1332 cm−1 zone center phonon of diamond. For graphite, the 1585 cm−1 E2g intralayer mode was studied, while for Si and Ge the 525 cm−1 and 303 cm−1 F2g zone center modes were measured.