Electronic transport properties of thallium sesquiselenide single crystals

Electronic transport measurements were made on single crystal samples of Tl 2 Se 3 . The crystals were prepared by a special design based on Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility and the carrier concentration was investigated in the temperature range 200-400 K. The energy gap as well as the ionization energy were calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range