Physics-Based Correction of Extracted Conductance Parameters of Nonlinear Microwave Semiconductor Devices

Nonlinear models of microwave semiconductor devices are usually evaluated from small-signal high-frequency measurements of differential parameters, performed at many bias points. A linear equivalent circuit is extracted at each bias point, and this is used to construct the nonlinear model. This procedure does not take into account the effects of slow phenomena as heating of the semiconductor or trapping/detrapping of carriers, produced by biasing. Thus, the parameters extracted from multi-bias S-parameter measurements do not fulfill simple consistency requirements. This paper presents a new method to extract a dynamic model from the measurements of the S-parameters through a physics-based correction of the extracted conductance parameters.