A high-performance 40-85 GHz MMIC SPDT switch using FET-integrated transmission line structure

A compact ultra-broadband distributed SPDT switch has been developed using GaAs PHEMTs. An FET-integrated transmission line structure, where the source pad of the shunt FET has been integrated into the signal line while the drain has been grounded to a via-hole with minimum parasitic inductance, has been proposed to extend the operating bandwidth of the distributed switches. SPDT and SPST switches using this structure have been fabricated using a commercial GaAs PHEMT foundry. The SPDT switch showed low insertion loss ( 30 dB) over an octave bandwidth from 40 to 85 GHz. At 77 GHz, the SPDT switch showed extremely low insertion loss of 1.4 dB and high isolation of 38 dB. The chip size was as small as 1.45/spl times/1.0 mm/sup 2/. To the best of our knowledge, this is among the best performance ever reported for an octave-band SPDT switch at this frequency range. SPST switch also showed the excellent performance with the insertion loss of 0.4 dB and isolation of 34 dB at 60 GHz.

[1]  D. C. Wang,et al.  A high performance V-band monolithic FET transmit-receive switch , 1988, IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers..

[2]  Dow-Chih Niu,et al.  A V-Band MMIC SPDT passive HEMT switch using impedance transformation networks , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[3]  Mohammad Madihian,et al.  A sub-nanosecond resonant-type monolithic T/R switch for millimeter-wave systems applications , 1998 .

[4]  S. Kuroda,et al.  High isolation V-band SPDT switch MMIC for high power use [HEMTs application] , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[5]  A. Klaassen,et al.  77 GHz monolithic MMIC Schottky- and PIN-diode switches based on GaAs MESFET and silicon SIMMWIC technology , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.