Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS

This paper presents reliability measurements of a differential Class-E power amplifier (PA) operating at 850MHz in 130nm CMOS. The RF performance of five samples was tested. At 1.1V, the PAs deliver +20.4–21.5dBm of output power with drain efficiencies and power-added efficiencies of 56–64% and 46–51%, respectively. After a continuous long-term test of 240 hours at elevated supply voltage of 1.4V, the output power dropped about 0.7dB.

[1]  M. Ruberto,et al.  A reliability-aware RF power amplifier design for CMOS radio chip integration , 2008, 2008 IEEE International Reliability Physics Symposium.

[2]  Michel Steyaert,et al.  RF Power Amplifiers for Mobile Communications , 2006 .

[3]  J.S. Yuan,et al.  Evaluation of RF-Stress Effect on Class-E MOS Power-Amplifier Efficiency , 2008, IEEE Transactions on Electron Devices.

[4]  Atila Alvandpour,et al.  A 3.3 V 72.2 Mbit/s 802.11n WLAN transformer-based power amplifier in 65 nm CMOS , 2010 .

[5]  Ya-Chin King,et al.  Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology , 2005 .

[6]  Changsik Yoo,et al.  A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-/spl mu/m CMOS , 2001 .

[7]  Atila Alvandpour,et al.  Low Voltage Class-E Power Amplifiers for DECT and Bluetooth in 130nm CMOS , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[8]  G. Palmisano,et al.  Degradation Mechanisms in CMOS Power Amplifiers Subject to Radio-Frequency Stress and Comparison to the DC Case , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[9]  H. Knapp,et al.  Lumped and distributed lattice-type LC-baluns , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[10]  D. Leenaerts,et al.  Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 µm CMOS , 2001, Proceedings of the 27th European Solid-State Circuits Conference.

[11]  Chuanzhao Yu,et al.  Electrical and Temperature Stress Effects on Class-AB Power Amplifier Performances , 2007, IEEE Transactions on Electron Devices.

[12]  F. Svelto,et al.  Analysis of reliability and power efficiency in cascode class-E PAs , 2006, IEEE Journal of Solid-State Circuits.

[13]  F. Svelto,et al.  Oxide Breakdown After RF Stress: Experimental Analysis and Effects on Power Amplifier Operation , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.