Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers

[1]  G. Tränkle,et al.  Analysis of the Survivability of GaN Low-Noise Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[2]  Masaru Sato,et al.  Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric , 2016, IEEE Transactions on Semiconductor Manufacturing.

[3]  R.T. Webster,et al.  Monolithic InP HEMT V-band low-noise amplifier , 1992, IEEE Microwave and Guided Wave Letters.

[4]  Takashi Jimbo,et al.  Low Noise and Low Distortion Performances of an AlGaN/GaN HFET , 2003 .

[5]  A. Kurdoghlian,et al.  Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[6]  A. Orzati,et al.  4-12 GHz InP HEMT-based MMIC low-noise amplifier , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

[7]  M Sato,et al.  68–110-GHz-Band Low-Noise Amplifier Using Current Reuse Topology , 2010, IEEE Transactions on Microwave Theory and Techniques.

[8]  Antonio Nanni,et al.  GaN-Based Robust Low-Noise Amplifiers , 2013, IEEE Transactions on Electron Devices.

[9]  M. van Heijningen,et al.  Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications , 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

[11]  Jenshan Lin,et al.  A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier , 2010, IEEE Microwave and Wireless Components Letters.