HgCdTe 128 × 128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si
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M. H. Kalisher | C. A. Cockrum | Scott M. Johnson | W. L. Ahlgren | J. B. James | J. James | W. Ahlgren | S. Johnson
[1] Anthony P. Erwin,et al. Etch pit study of dislocation formation in Hg1−xCdxTe during array hybridization and its effect on device performance , 1989 .
[2] R. P. Ruth,et al. Metalorganic chemical vapor deposition growth of Cd1−yZnyTe epitaxial layers on GaAs and GaAs/Si substrates , 1989 .
[3] H. Choi,et al. Heteroepitaxy on silicon , 1988 .
[4] Tse Tung,et al. Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects , 1988 .
[5] M. H. Kalisher. The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts , 1984 .
[6] S. Sen,et al. Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process☆ , 1988 .
[7] H. F. Schaake,et al. Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A. , 1990 .
[8] K R. Zanio,et al. HgCdTe Photovoltaic Detectors On Si Substrates , 1987, Defense, Security, and Sensing.