Dark‐current and capacitance analysis of InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition

Electron traps have been observed at the InGaAs/InP heterointerface by capacitance voltage measurements in p‐i‐n photodiodes grown by metalorganic chemical vapor deposition. These traps might be responsible for the sharp increase in dark current which occurred when the space‐charge region extended to the InP buffer layer. In addition, the temperature and voltage dependence of dark current has been described using a generation current model which takes into account the thermoionic field emission from an InGaAs midgap trap.