Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
暂无分享,去创建一个
H. Tsuchida | T. Kimoto | H. Okumura | Tomohisa Kato | T. Miyazawa | Y. Yonezawa | K. Takenaka | S. Matsunaga | M. Miyajima | A. Otsuki | T. Tawara | M. Miyazato | Mina Ryo | Takumi Fujimoto