Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss
暂无分享,去创建一个
Alexey E. Zhukov | Mikhail V. Maximov | F. I. Zubov | M. M. Kulagina | Yu. M. Shernyakov | A. V. Savelyev | Y. Shernyakov | A. Zhukov | M. Kulagina | M. Maximov | A. Savelyev | V. V. Korenev | F. Zubov
[1] Hajime Shoji,et al. Effect of phonon bottleneck on quantum-dot laser performance , 1997 .
[2] O. Dehaese,et al. Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission , 2002 .
[3] Andrea Fiore,et al. Simultaneous two-state lasing in quantum-dot lasers , 2003 .
[4] Andrea Fiore,et al. Modeling carrier dynamics in quantum-dot lasers , 2004 .
[5] Philippe Caroff,et al. Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection , 2005 .
[6] A. Fiore,et al. Carrier dynamics in quantum dot lasers (Invited Paper) , 2005, SPIE Microtechnologies.
[7] M. Ishida,et al. Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection , 2005 .
[8] Y. Tanguy,et al. Electron-hole asymmetry and two-state lasing in quantum dot lasers , 2005, EQEC '05. European Quantum Electronics Conference, 2005..
[9] Li Jiang,et al. Excited-State-Mediated Capture of Carriers Into the Ground State and the Saturation of Optical Power in Quantum-Dot Lasers , 2006, IEEE Photonics Technology Letters.
[10] A. Zhukov,et al. Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots , 2007 .
[11] F. Grillot,et al. Analysis of the Double Laser Emission Occurring in 1.55-$\mu{\hbox {m}}$ InAs–InP (113)B Quantum-Dot Lasers , 2007, IEEE Journal of Quantum Electronics.
[12] Y. H. Chen,et al. Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers , 2007 .
[13] Alexey E. Zhukov,et al. Quantum dot diode lasers for optical communication systems , 2008 .
[14] Y. Joshi,et al. Thermally dependent characteristics and spectral hole burning of the double-lasing, edge-emitting quantum-dot laser , 2010 .
[15] Tao Yang,et al. Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers , 2010 .
[16] Lee Jongmin,et al. Double-state Lasing from Semiconductor Quantum Dot Laser Diodes Caused by Slow Carrier Relaxation , 2011 .
[17] Mikhail V. Maximov,et al. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser , 2012 .
[18] Y. Shernyakov,et al. Features of simultaneous ground- and excited-state lasing in quantum dot lasers , 2012 .
[19] Mariangela Gioannini,et al. Ground-state power quenching in two-state lasing quantum dot lasers , 2012 .
[20] Alexey E. Zhukov,et al. Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach , 2012, Photonics Europe.
[21] Y. Shernyakov,et al. The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers , 2013 .
[22] A. Zhukov,et al. Analytical approach to the multi-state lasing phenomenon in quantum dot lasers , 2013 .
[23] A. Zhukov,et al. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers , 2013 .
[24] L. Asryan,et al. Direct and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasers , 2014 .
[25] Gadi Eisenstein,et al. Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers , 2014 .
[26] Benjamin Lingnau,et al. Understanding Ground-State Quenching in Quantum-Dot Lasers , 2015, IEEE Journal of Quantum Electronics.
[27] Alexey E. Zhukov,et al. Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers , 2015, Europe Optics + Optoelectronics.