Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
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Tomonori Ishikawa | Kiyoshi Asakawa | Hitoshi Nakamura | Shigeru Kohmoto | K. Asakawa | T. Ishikawa | Hitoshi Nakamura | S. Kohmoto | H. Nakamura
[1] Tomonori Ishikawa,et al. Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy , 1998 .
[2] R. Williams,et al. Kinetic routes to the growth of monodisperse islands , 1995 .
[3] L. Goldstein,et al. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices , 1985 .
[4] A. Barabasi,et al. Spatial ordering of islands grown on patterned surfaces , 1998 .
[5] K. Asakawa,et al. InAs-Dot/GaAs Structures Site-Controlled by in situ Electron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy Growth , 1999 .
[6] M. Kasu,et al. Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale , 1997 .
[7] Eiichi Kuramochi,et al. Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array , 1997 .
[8] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .
[9] So,et al. Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy , 1996 .