论文信息 - Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs - 字舞流文

Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs

H. Mertens | N. Horiguchi | Y. Oniki | N. Takahashi | T. Hurd | F. Holsteyns | E. Altamirano-Sanchez | S. Kal | C. Alix | A. Mosden | Y. Muraki | K. Kumar | Pallavi P. Gowda