论文信息 - Overshoot stress impact on HfO2 high-κ layer dynamic SILC

Overshoot stress impact on HfO2 high-κ layer dynamic SILC

Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT~0.8 nm) high-κ layer are investigated, which reveals that overshoot is of great concern to high-κ layer leakage current. The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to understand the above mentioned phenomena.

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