论文信息 - High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Abstract Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template.

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