论文信息 - Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Scandium oxide was deposited epitaxially on (0001) GaN via gas-source molecular beam epitaxy (GSMBE) using elemental Sc and an electron cyclotron resonance (ECR) oxygen plasma. HXRD indicated that the Sc 2 O 3 has a lower defect density than similarly prepared films of Gd 2 O 3 . The scandium oxide was atomically smooth, with a rms roughness of 0.5-0.8 nm, and was uniform in stoichiometry as measured by Auger electron spectroscopy (AES) depth profiling. An interface state density of mid 10 11 eV -1 cm -2 was determined from capacitance-voltage profiling using the Terman method. This interface state density was roughly a factor of five lower than that obtained from similar diodes made from SiO 2 on GaN.

[1] P. Mars,et al. Learning algorithms for minimum cost, delay bounded multicast routing in dynamic environments , 1999 .

[2] H. J. Hagger,et al. Solid State Electronics , 1960, Nature.

[3] V. Terekhova. RARE EARTH ALLOYS , 1963 .

[4] C. R. Abernathy,et al. Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics , 1998 .

[5] Steven C. Binari,et al. GaN FETs for microwave and high-temperature applications , 1997 .

[6] H. C. Casey,et al. Low interface trap density for remote plasma deposited SiO2 on n‐type GaN , 1996 .

[7] M. Umeno,et al. Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density , 1998 .

[8] Albert G. Baca,et al. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors , 1998 .

[9] Tso-Ping Ma,et al. High-quality oxide/nitride/oxide gate insulator for GaN MIS structures , 2001 .

[10] Andrew G. Glen,et al. APPL , 2001 .