论文信息 - A quick address detection of an anomalous memory cell for flash EEPROM

A quick address detection of an anomalous memory cell for flash EEPROM

A simple technique for quickly detecting an address of an anomalous memory cell for flash EEPROM devices is described. A proposed Multi-Address Selection Scheme (MASS) can drastically reduce measurement cycles for searching an address of an anomalous memory cell which has an abnormally high or low threshold voltage. A systematic evaluation for the reliability of flash EEPROM has been realized by this quick address detection technology.

[1] Koji Sakui,et al. A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices (Special Issue on Microelectronic Test Structure) , 1996 .

[2] G. Atwood,et al. Erratic Erase In ETOX/sup TM/ Flash Memory Array , 1993, Symposium 1993 on VLSI Technology.

[3] Kazunori Masuda,et al. A new technique for measuring threshold voltage distribution in flash EEPROM devices , 1995, Proceedings International Conference on Microelectronic Test Structures.