Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires
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Volker Schmidt | U. Gösele | S. Senz | U. Gösele | V. Schmidt | Stephan Senz | Volker Schmidt | St. Senz
[1] H. Lüth,et al. Photoluminescence and intrinsic properties of MBE-grown InN nanowires. , 2006, Nano letters.
[2] M. Islam,et al. Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition , 2006 .
[3] Shashank Sharma,et al. Surface Charge Density of Unpassivated and Passivated Metal-Catalyzed Silicon Nanowires , 2006 .
[4] E. Bakkers,et al. Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning , 2006 .
[5] Charles M. Lieber,et al. Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires , 2005, Science.
[6] Volker Schmidt,et al. Diameter-dependent growth direction of epitaxial silicon nanowires. , 2005, Nano letters.
[7] Thomas Richter,et al. Size-dependent photoconductivity in MBE-grown GaN-nanowires. , 2005, Nano letters.
[8] Wei Lu,et al. Synthesis and Fabrication of High‐Performance n‐Type Silicon Nanowire Transistors , 2004 .
[9] Charles M. Lieber,et al. Doping and Electrical Transport in Silicon Nanowires , 2000 .
[10] Jong-Son Lyu,et al. Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement , 1993 .
[11] D. Fleetwood,et al. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .
[12] Daniel M. Fleetwood,et al. Long‐term annealing study of midgap interface‐trap charge neutrality , 1992 .
[13] Patrick M. Lenahan,et al. Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates , 1988 .
[14] C. Munakata,et al. Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer , 1986 .
[15] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[16] C. Munakata,et al. Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers* , 1984 .
[17] Patrick M. Lenahan,et al. Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .
[18] D. Biegelsen,et al. Characteristic electronic defects at the Si‐SiO2 interface , 1983 .
[19] Patrick M. Lenahan,et al. An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface , 1983 .
[20] P. Dressendorfer,et al. Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface , 1982 .
[21] E. H. Nicollian,et al. Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .
[22] Bruce E. Deal,et al. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .
[23] D. Griscom. E ′ center in glassy Si O 2 : O 17 , H 1 , and "very weak" Si 29 superhyperfine structure , 1980 .
[24] J. Joannopoulos,et al. Theory of the electronic structure of the Si-SiO 2 interface , 1980 .
[25] B. E. Deal. Standardized terminology for oxide charges associated with thermally oxidized silicon , 1980, IEEE Transactions on Electron Devices.
[26] Bruce E. Deal,et al. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers , 1979 .
[27] J. R. Cricchi,et al. Characterization of thin-oxide MNOS memory transistors , 1972 .
[28] Y. Nishi. Electron Spin Resonance in SiO2 Grown on Silicon , 1966 .
[29] R. H. Silsbee,et al. Electron Spin Resonance in Neutron‐Irradiated Quartz , 1961 .
[30] R. A. Weeks,et al. Paramagnetic Resonance of Lattice Defects in Irradiated Quartz , 1956 .
[31] G. L. Pearson,et al. Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges , 1948 .
[32] M. Planck. Influence of the Si/SiO 2 interface on the charge carrier density of Si nanowires , 2007 .
[33] P. Dressendorfer,et al. Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures , 1984 .
[34] Yoshio Nishi,et al. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I , 1971 .
[35] S. M. Sze,et al. Physics of semiconductor devices , 1969 .