From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices With Ultrathin Gate Oxide
暂无分享,去创建一个
[1] C. F. Wheatley,et al. Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs , 1998 .
[2] M. Nafria,et al. A function-fit model for the soft breakdown failure mode , 1999, IEEE Electron Device Letters.
[3] Martin L. Green,et al. Precursor ion damage and angular dependence of single event gate rupture in thin oxides , 1998 .
[4] N. Ajika,et al. Identification of stress-induced leakage current components and the corresponding trap models in SiO/sub 2/ films , 1997 .
[5] Alessandro Paccagnella,et al. Ionizing radiation induced leakage current on ultra-thin gate oxides , 1997 .
[6] Alessandro Paccagnella,et al. Stress induced leakage current in ultra-thin gate oxides after constant current stress , 1997 .
[7] L. Edmonds,et al. Breakdown of gate oxides during irradiation with heavy ions , 1998 .
[8] Alessandro Paccagnella,et al. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides , 1998 .