论文信息 - High temperature behaviour of GaN-on-Si high power MISHEMT devices

High temperature behaviour of GaN-on-Si high power MISHEMT devices

The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

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