Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20–30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling o...
[1]
L. Coldren,et al.
Diode Lasers and Photonic Integrated Circuits
,
1995
.
[2]
E. Yablonovitch,et al.
Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
,
1990
.
[3]
G. K. Reeves,et al.
Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model
,
1995
.
[4]
G. Y. Robinson,et al.
Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs
,
1975
.
[5]
D. Rowe.
CRC Handbook of Thermoelectrics
,
1995
.
[6]
F. N. Masana,et al.
A closed form solution of junction to substrate thermal resistance in semiconductor chips
,
1996
.
[7]
Per Hyldgaard,et al.
Phonon superlattice transport
,
1997
.
[8]
Gang Chen,et al.
Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlattices
,
1998
.
[9]
M. Ogawa.
Alloying behavior of Ni/Au‐Ge films on GaAs
,
1980
.
[10]
Charles B. Morrison,et al.
New processing approach for grafting optoelectronic devices and applications to multichip modules
,
1997,
Photonics West.
[11]
Ali Shakouri,et al.
Enhanced Thermionic Emission Cooling in High Barrier Superlattice Heterostructures
,
1998
.
[12]
Stafford,et al.
41st Electronics components and technology conference : [selected papers], Atlanta, GA, May 11-15, 1991
,
1991
.
[13]
Ali Shakouri,et al.
Heterostructure integrated thermionic coolers
,
1997
.
[14]
Grafted InGaAsP light emitting diodes on glass channel waveguides
,
1992
.
[15]
Shin-Yuan Wang,et al.
Optical and structural properties of epitaxially lifted-off GaAs films
,
1998
.
[16]
Ali Shakouri,et al.
Thermionic emission cooling in single barrier heterostructures
,
1999
.
[17]
G. K. Reeves,et al.
Obtaining the specific contact resistance from transmission line model measurements
,
1982,
IEEE Electron Device Letters.
[18]
J. Fleurial.
Proceedings of 15th International Conference on Thermoelectrics
,
1996
.