论文信息 - TEM study of the interface of anodic-bonded Si/glass

TEM study of the interface of anodic-bonded Si/glass

Abstract Oxygen diffused into silicon from a sodium-depleted region during Si/glass anodic bonding. The diffusion formed amorphous silicon oxide that accounted for the bond formation. Ion migrations within the sodium-depleted region were complicated.

[1] S. Grigull,et al. Ion Drift Processes in Pyrex‐Type Alkali‐Borosilicate Glass during Anodic Bonding , 1998 .

[2] R. Schlögl,et al. Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon Wafer Bonding , 1997 .

[3] Paul J. Jorgensen,et al. Effect of an Electric Field on Silicon Oxidation , 1962 .

[4] D. E. Carlson,et al. Electrode “Polarization” in Alkali‐Containing Glasses , 1972 .

[5] K. Bauer,et al. Anodic bonding of evaporated glass structured with lift-off technology for hermetical sealing , 2000 .

[6] D. Carlson. Ion Depletion of Glass at a Blocking Anode: I, Theory and Experimental Results for Alkali Silicate Glasses , 1974 .

[7] K. Albaugh,et al. Rate Processes during Anodic Bonding , 1992 .

[8] Shuichi Shoji,et al. Low-temperature anodic bonding using lithium aluminosilicate-β-quartz glass ceramic , 1998 .

[9] G. Wallis,et al. Field Assisted Glass‐Metal Sealing , 1969 .

[10] T. R. Anthony. Dielectric isolation of silicon by anodic bonding , 1985 .