论文信息 - Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition - 字舞流文

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Baoping Zhang | Qiming Wang | Jinzhong Yu | Jiangyong Zhang | J. Shang | Chao-Min Wu

[1] Jiangyong Zhang,et al. Blue-green optically pumped GaN-based vertical cavity surface emitting laser , 2008 .

[2] A. Carlo,et al. The influence of mobility unbalance on GaN based vertical cavity surface emitting lasers , 2008 .

[3] H. Kuo,et al. CW lasing of current injection blue GaN-based vertical cavity surface emitting laser , 2008 .

[4] S. C. Wang,et al. Hybrid nitride microcavity using crack‐free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors , 2007 .

[5] Marc Ilegems,et al. Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers , 2005 .

[6] H. Kuo,et al. MOCVD growth of AlN/GaN DBR structures under various ambient conditions , 2004 .

[7] H. Gotoh,et al. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors , 2003 .

[8] F. Kish,et al. A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser , 2000 .

[9] Catalano,et al. Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.

[10] Kenichi Iga,et al. Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region , 1995 .

[11] L. Cai,et al. Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors , 2009, Journal of Lightwave Technology.