A new MOSFET & IGBT gate drive insulated by a piezoelectric transformer

In this paper, a new gate drive for MOSFET'S and IGBT'S is presented based on the use of a piezoelectric transformer. The characterisation of the transformer and the analysis of the energy transferred to the grid of the transistor are achieved in order to determine the optimal physical structure of the transformer. Satisfactory results have been obtained in driving a 6A/100V/10kHz chopper.