Modeling and characterization of gate oxide reliability
暂无分享,去创建一个
[1] Jack C. Lee,et al. Low-pressure chemical vapor deposited oxide process for MOS device application. , 1988 .
[2] Chenming Hu,et al. Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown , 1988, Technical Digest., International Electron Devices Meeting.
[3] C. Hu,et al. Accelerated testing of silicon dioxide wearout , 1987, 1987 Symposium on VLSI Technology.
[4] S. Holland,et al. Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides , 1986, 1986 International Electron Devices Meeting.
[5] G. Swartz,et al. Gate oxide integrity of NMOS transistor arrays , 1986, IEEE Transactions on Electron Devices.
[6] Chenming Hu,et al. Substrate hole current and oxide breakdown , 1986 .
[7] Stephen E. Holland,et al. Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2 , 1986 .
[8] C. Hu,et al. Oxide Defect Density, Failue Rate and Screen Yield , 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers.
[9] S. Holland,et al. Hole trapping and breakdown in thin SiO2 , 1986, IEEE Electron Device Letters.
[10] A. H. Carim,et al. A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides , 1985 .
[11] J. McPherson,et al. Acceleration Factors for Thin Gate Oxide Stressing , 1985, 23rd International Reliability Physics Symposium.
[12] S. Holland,et al. A quantitative physical model for time-dependent breakdown in SiO2 , 1985, 23rd International Reliability Physics Symposium.
[13] K. Taniguchi,et al. Time-dependent-dielectric breakdown of thin thermally grown SiO2films , 1985, IEEE Transactions on Electron Devices.
[14] Akira Ohsawa,et al. Breakdown in silicon oxides (II)—correlation with Fe precipitates , 1984 .
[15] T. Matsukawa,et al. Time Dependent Dielectric Breakdown Measurement of High Pressure Low Temperature Oxidized Film , 1984, 22nd International Reliability Physics Symposium.
[16] B. Ricco,et al. Novel Mechanism for Tunneling and Breakdown of Thin SiO 2 Films , 1983 .
[17] P. S. D. Lin,et al. Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking Faults , 1983 .
[18] Kenji Taniguchi,et al. Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films , 1983, 21st International Reliability Physics Symposium.
[19] J. Monkowski,et al. Failure Mechanism in MOS Gates Resulting from Particulate Contamination , 1982, 20th International Reliability Physics Symposium.
[20] Arnold Berman,et al. Time-Zero Dielectric Reliability Test by a Ramp Method , 1981, 19th International Reliability Physics Symposium.
[21] E. S. Anolick,et al. Low-Field Time-Dependent Dielectric Integrity , 1979, IEEE Transactions on Reliability.
[22] Dwight L. Crook,et al. Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown , 1979, 17th International Reliability Physics Symposium.
[23] E. Harari. Dielectric breakdown in electrically stressed thin films of thermal SiO2 , 1978 .
[24] N. Klein,et al. Current runaway in insulators affected by impact ionization and drift , 1977 .
[25] M. Shatzkes,et al. Impact ionization and positive charge in thin SiO2 films , 1976 .
[26] Thomas H. DiStefano,et al. Impact ionization model for dielectric instability and breakdown , 1974 .
[27] C. Hu,et al. Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide , 1988, IEEE Electron Device Letters.
[28] I. Chen,et al. Accelerated testing of time-dependent breakdown of SiO2 , 1987, IEEE Electron Device Letters.
[29] C. Hu. Thin oxide reliability , 1985, 1985 International Electron Devices Meeting.
[30] K. Higeta,et al. High capacitance ultra-thin Ta2O5dielectric film applied to a high-speed bipolar memory cell , 1985, 1985 International Electron Devices Meeting.
[31] H. Tango,et al. A deep-trenched capacitor technology for 4 mega bit dynamic RAM , 1985, 1985 International Electron Devices Meeting.
[32] H. Abe,et al. Analysis of defects in thin SiO2thermally grown on Si substrate , 1985, 1985 International Electron Devices Meeting.
[33] Chenming Hu,et al. Electrical breakdown in thin gate and tunneling oxides , 1985, IEEE Transactions on Electron Devices.