Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-/spl Aring/ gate oxide MOSFETs
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Qi Xiang | Jimmie J. Wortman | K. Ahmed | Effiong Ibok | Geoffrey Choh-Fei Yeap | B. Ogle | John R. Hauser
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