Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide
暂无分享,去创建一个
[1] G. B. Stringfellow. Effect of surface treatment on surface recombination velocity and diode leakage current in GaP , 1976 .
[2] J. Flemish,et al. Selective Wet Etching of GaInP , GaAs , and InP in Solutions of HCl , CH 3 COOH , and H 2 O 2 , 1993 .
[3] J. Simmons,et al. Sulfur Passivation of InP/InGaAs Metal‐Semiconductor‐Metal Photodetectors , 1999 .
[4] H. Morkoç,et al. Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability , 1995 .
[6] M. Melloch,et al. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes , 1988 .
[7] R. N. Nottenburg,et al. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation , 1987 .
[8] Yuyuan Tian,et al. Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM , 1998 .
[9] Wen-Chau Liu,et al. Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments , 2006 .
[10] Atsushi Koma,et al. A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx Treatment , 1988 .
[11] M. Oshima,et al. Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors , 1991 .
[12] X. Ding,et al. A mild electrochemical sulfur passivation method for GaAs(100) surfaces , 1995 .
[13] S. Ang,et al. Polyimide-passivated pn diodes , 1990 .
[14] K. N. Bhat,et al. Combined effect of (NH4)2Sx treatment and post-metallization annealing with plasma-enhanced chemical vapour deposition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates , 2002 .
[15] W. Bauhofer,et al. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions , 2005 .
[16] Amitava DasGupta,et al. Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment , 2004 .
[17] Edward Sacher,et al. S-passivated InP (100)-(1×1) surface prepared by a wet chemical process , 1992 .
[18] X. Hou,et al. Sulfur passivation of GaAs metal-semiconductor field-effect transistor , 2000 .
[19] D. L. Lile,et al. Sulfur as a surface passivation for InP , 1988 .
[20] J. Sebastian,et al. Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes , 1996, IEEE Photonics Technology Letters.
[21] Amitava DasGupta,et al. Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors , 2003 .
[22] T. Pearsall,et al. Ga 0.47 In 0.53 As: A ternary semiconductor for photodetector applications , 1980 .