论文信息 - GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions - 字舞流文

GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions

Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.

A. Yariv | Israel Ury | Shlomo Margalit | Chien-Ping Lee | A. Yariv | Chien-Ping Lee | S. Margalit | I. Ury

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