论文信息 - Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage

Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage

Analytical relations for the onset of impact-ionization induced instabilities in bipolar transistors are derived and verified by both 3D simulations and measurements. They allow the designer to calculate the maximum usable DC output voltage for different driving conditions.

Hans-Martin Rein | H. Rein | M. Rickelt | M. Rickelt

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