Solution growth of silicon on patterned amorphous SiO2 substrates

[1]  M. Green,et al.  Low-temperature liquid phase epitaxy of silicon , 1991 .

[2]  E. I. Givargizov Oriented Crystallization on Amorphous Substrates , 1991 .

[3]  P. Hagan,et al.  Summary Abstract: Theory and simulations of zone II microstructures in thin films , 1988 .

[4]  Harry A. Atwater,et al.  Silicon-on-insulator by graphoepitaxy and zone-melting recrystallization of patterned films , 1983 .

[5]  Henry I. Smith,et al.  The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization , 1983 .

[6]  L. Darken Mechanism for the Graphoepitaxy of Electrodeposited Tin , 1983 .

[7]  U. Schwabe,et al.  Properties of Mo‐Silicides in Si‐Gate Technology , 1983 .

[8]  D. Lowndes,et al.  Graphoepitaxy of electrodeposited tin , 1982 .

[9]  D. Flanders,et al.  The effect of grooves in amorphous substrates on the orientation of metal deposits: I. Carbon substrates , 1982 .

[10]  H. Mori 2-D Grating Graphoepitaxy of Silicon Films from Silicon-Gold Supersaturated Solution , 1981 .

[11]  N. N. Sheftal,et al.  Diataxial growth of silicon and germanium , 1981 .

[12]  Dimitri A. Antoniadis,et al.  Graphoepitaxy of silicon on fused silica using surface micropatterns and laser crystallization , 1979 .

[13]  Michael W. Geis,et al.  Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization , 1979 .

[14]  Henry I. Smith,et al.  Oriented crystal growth on amorphous substrates using artificial surface‐relief gratings , 1978 .

[15]  J. Hunt,et al.  Nucleation of Solid in an Undercooled Liquid by Cavitation , 1966 .