论文信息 - Growth of GaAs1–xBix/GaAs multi‐quantum wells by molecular beam epitaxy

Growth of GaAs1–xBix/GaAs multi‐quantum wells by molecular beam epitaxy

GaAs1–xBix/GaAs multi-quantum well (MQW) structures were grown for the first time by molecular beam epitaxy (MBE). Successful growth of MQWs was demonstrated by observing clear satellite peaks in high-resolution X-ray diffraction (HR-XRD) measurements. Photoluminescence (PL) emission at room temperature (RT) was observed from the MQWs. The peak energy of RT PL emitted from GaAs0.948Bi0.052/GaAs MQWs increased with decreasing thickness of the well layer, which implies quantum size effect. The MQW structures were thermally stable even after annealing up to 800 °C, and the PL emission was observed even after annealing up to 600 °C. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

K. Oe | M. Yoshimoto | Y. Kinoshita | G. Feng | Yoriko Tominaga

[1] K. Oe,et al. Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy , 2007 .

[2] K. Oe,et al. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix , 2005 .

[3] K. Oe,et al. GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission , 2004 .

[4] K. Oe,et al. New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy , 2004 .

[5] K. Oe,et al. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy , 2003 .

[6] François Schiettekatte,et al. Molecular beam epitaxy growth of GaAs1−xBix , 2003 .

[7] O. Wada,et al. Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy , 2003 .

[8] K. Oe. Characteristics of Semiconductor Alloy GaAs1-xBix , 2002 .

[9] Kunishige Oe,et al. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy , 1998 .

[10] K. Oe,et al. Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique , 2003 .