Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer
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Herbert Zirath | Niklas Rorsman | Hans Hjelmgren | Lars Hultman | Jun Lu | Einar Ö. Sveinbjörnsson | H. Zirath | N. Rorsman | O. Kordina | Jun Lu | L. Hultman | E. Sveinbjörnsson | Olof Kordina | Anna Malmros | H. Hjelmgren | Jr-Tai Chen | Jr-Tai Chen | A. Malmros
[1] Daniel Nilsson,et al. Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure , 2015 .
[2] J. Carlin,et al. AlInN-Based HEMTs for Large-Signal Operation at 40 GHz , 2013, IEEE Transactions on Electron Devices.
[3] Ju Wu,et al. Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells , 2012 .
[4] H. Zirath,et al. Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier , 2019, IEEE Transactions on Electron Devices.
[5] Y. Hao,et al. Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition , 2012 .
[6] Yu Cao,et al. 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation , 2011, IEEE Electron Device Letters.
[7] E. Janzén,et al. Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer , 2015, IEEE Transactions on Electron Devices.
[8] P. Burke,et al. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy , 2014 .
[9] U. Mishra,et al. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment , 2014 .
[11] Hervé Blanck,et al. Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs , 2011 .
[12] E. Janzén,et al. Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process , 2016, IEEE Transactions on Electron Devices.
[13] Martin Kuball,et al. Subthreshold Mobility in AlGaN/GaN HEMTs , 2016, IEEE Transactions on Electron Devices.
[14] Martin Kuball,et al. Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping , 2012 .
[15] H. Yang,et al. Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure , 2018 .
[16] Debdeep Jena,et al. Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications , 2007 .
[17] G. Snider,et al. Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz , 2013 .
[18] T. Suski,et al. In-clustering induced anomalous behavior of band gap in InAlN and InGaN , 2010 .
[19] N. Rorsman,et al. Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs , 2015, IEEE Electron Device Letters.
[20] Dong Seup Lee,et al. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier , 2011, IEEE Electron Device Letters.
[21] Eric Feltin,et al. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures , 2006 .
[22] C. Gaquiere,et al. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz , 2010, IEEE Electron Device Letters.
[23] Xiang Gao,et al. ${\rm SiN}_{x}$ /InAlN/AlN/GaN MIS-HEMTs With 10.8 ${\rm THz}\cdot{\rm V}$ Johnson Figure of Merit , 2014, IEEE Electron Device Letters.
[24] P. Komninou,et al. Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy , 2009 .
[25] A. Alt,et al. Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K , 2013, IEEE Transactions on Electron Devices.
[26] Fabrizio Roccaforte,et al. Temperature dependence of the specific resistance in Ti∕Al∕Ni∕Au contacts on n-type GaN , 2006 .
[27] W. Z. Zhou,et al. Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures , 2015 .
[28] Peter Kordos,et al. Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT , 2005, Microelectron. J..
[29] Herbert Zirath,et al. Accurate small-signal modeling of HFET's for millimeter-wave applications , 1996 .
[30] Hadis Morkoç,et al. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates , 2010 .
[31] N. Rorsman,et al. Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures , 2015 .
[32] Xiaoyan Wang,et al. The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure , 2008, Microelectron. J..
[33] D. Jena,et al. Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors , 2010 .
[34] Lin-An Yang,et al. High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition , 2011 .
[35] O. Brandt,et al. (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) , 2008 .
[36] Hadis Morkoç,et al. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors , 2007 .
[37] Yue Hao,et al. Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric , 2015, IEEE Transactions on Electron Devices.