CrSi(O,N)‐based cermet‐like material for high‐ohmic thin film resistor applications

The thin film material CrSi(O,N) has been investigated with the aim to realize resistive films with precision properties in the resistivity range between 2 and 20 mΩcm. The resistor layers were prepared by radio‐frequency magnetron sputtering from cermet targets containing all functionally required film components. The influence of typical technological parameters as argon pressure, source power, and target–substrate distance on the film properties was studied. Depending on target composition, preparation conditions, and thermal treatment, the attainable resistivity limits of the precision parameters temperature coefficient of resistivity (TCR) and long time stability (ΔR/R) were determined. It could be shown that two of the studied target materials achieve the resistivity range 2 mΩcm < ρ < 20 mΩcm with the resistor parameters TCR of 10 ppm K−1 and ΔR/R of <0.2%.

[1]  Reiner W. Kuehl,et al.  Influence of bias humidity testing and application on time-dependent, Arrhenius-law-based stability predictions for thin film resistors , 2014, Microelectron. Reliab..

[2]  Junkui Ma,et al.  Deposition of Cr–Si–Ni–Mo films at a low sputtering current and performance of heat and humid resistance , 2014 .

[3]  R. Modica,et al.  Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors , 2012, IEEE Transactions on Electron Devices.

[4]  O. Le Néel,et al.  Reliability analysis of CrSi Thin Film Resistors , 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[5]  F. Wang,et al.  Morphological and electrical characterization of SixCryCzBv thin films , 2010 .

[6]  V. Felmetsger.  Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSi2–Cr–SiC targets by S-gun magnetron , 2010 .

[7]  Jian-sheng Wu,et al.  Microstructure and electrical characteristics of Cr–Si–Ni films deposited on glass and Si (1 0 0) substrates by RF magnetron sputtering , 2004 .

[8]  Kevin Barraclough,et al.  I and i , 2001, BMJ : British Medical Journal.

[9]  K. Henson,et al.  The effects of the process parameters on the electrical and microstructure characteristics of the CrSi thin resistor films : part I , 1998 .

[10]  J. J. Broek,et al.  Metal film precision resistors: Resistive metal films and a new resistor concept , 1998 .

[11]  H. Vinzelberg,et al.  Nanodisperse CrSi(O, N) thin films—conductivity, thermopower and applications , 1993 .

[12]  G. Schubert,et al.  High temperature stability of CrSi(W)N films , 1992 .

[13]  I. Mönch,et al.  Transport properties of composite thin films and application to sensors , 1992 .

[14]  R. Grötzschel,et al.  Chemometrics-aided RBS analysis of thin films , 1991 .