论文信息 - Oxide electronics: Transistors pick up steam. - 字舞流文

Oxide electronics: Transistors pick up steam.

High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip.

D. Keszler | Douglas Keszler

[1] Randy Hoffman,et al. Transparent thin-film transistors with zinc indium oxide channel layer , 2005 .

[2] Tim Koch,et al. 21.4: Zinc Indium Oxide Thin-Film Transistors for Active-Matrix Display Backplane , 2009 .

[3] 17.4L: LateNews Paper: Contact Resistance and Process Integration Effects on HighPerformance Oxide TFTs with SolutionDeposited Semiconductor and Gate Dielectric Layers , 2010 .

[4] Dan Zhao,et al. Solution-Processed Indium Zinc Oxide Transparent Thin Film Transistors , 2007 .

[5] Yeon-Gon Mo,et al. 69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs , 2010 .

[6] H. Sirringhaus,et al. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. , 2011, Nature materials.

[7] Douglas A. Keszler,et al. Spin-coated zinc oxide transparent transistors , 2003 .

[8] D. W. Readey,et al. The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors , 2008 .