论文信息 - MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm - 字舞流文

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

J. Oswald | P. Komninou | A. Hospodková | J. Pangrác | M. Zíková | J. Kioseoglou | E. Hulicius | P. Krčil | M. Zíková