Investigation of HfO2/Ti based vertical RRAM - Performances and variability

An easy-to-fabricate, low-cost, sidewall TiN/HfO2/Ti vertical resistive RAM (VRRAM) device is proposed. Devices with bottom electrode thickness down to 10nm were fabricated and characterized. Forming, SET and RESET voltages of respectively 2V, 0.5V and -0.5V were measured. A stable memory window of one decade was maintained after 105s at 200°C. The impact of scaling on the operating voltages and memory resistance levels was evaluated, showing a SET and RESET voltage reduction as the cell diameter is reduced. Finally the cycle-to-cycle resistance variability was addressed.

[1]  Y. Nishi,et al.  Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[2]  Luca Larcher,et al.  A compact model of hafnium-oxide-based resistive random access memory , 2013, Proceedings of 2013 International Conference on IC Design & Technology (ICICDT).

[3]  E. Vianello,et al.  Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses , 2014, 2014 IEEE International Electron Devices Meeting.

[4]  H. Ahn,et al.  Realization of vertical resistive memory (VRRAM) using cost effective 3D process , 2011, 2011 International Electron Devices Meeting.

[5]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study , 2012, IEEE Transactions on Electron Devices.

[6]  C. Hu,et al.  9nm half-pitch functional resistive memory cell with <1µA programming current using thermally oxidized sub-stoichiometric WOx film , 2010, 2010 International Electron Devices Meeting.

[7]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[8]  A. Calderoni,et al.  Performance comparison of O-based and Cu-based ReRAM for high-density applications , 2014, 2014 IEEE 6th International Memory Workshop (IMW).

[9]  S. J. Kim,et al.  Low power operating bipolar TMO ReRAM for sub 10 nm era , 2010, 2010 International Electron Devices Meeting.