Deposition of silicon dioxide films with an atmospheric-pressure plasma jet

A plasma jet has been developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream. The properties of the silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown silicon dioxide films at C.

[1]  L. J. Bellamy.  The infra-red spectra of complex molecules , 1962 .

[2]  A. Henne.  Singlet Oxygen, Reactions with Organic Compounds & Polymers. Herausgegeben von B. Rånby und J. F. Rabek. John Wiley & Sons, New York 1978. 1. Aufl., 331 S., geb. £ 15.00 , 1979 .

[3]  M. Kogoma,et al.  Synthesis of plasma-polymerized tetraethoxysilane and hexamethyldisiloxane films prepared by atmospheric pressure glow discharge , 1995 .

[4]  H. Koinuma,et al.  Open air deposition of SiO2 film from a cold plasma torch of tetramethoxysilane‐H2‐Ar system , 1994 .

[5]  Etching materials with an atmospheric-pressure plasma jet , 1998 .

[6]  T. Cale,et al.  Kinetics and mechanism of silicon dioxide deposition through thermal pyrolysis of tetraethoxysilane , 1992 .

[7]  P. Balk,et al.  The Si-SiO2 system , 1988 .

[8]  R. Carruthers,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films , 1992 .

[9]  E. A. Ogryzlo,et al.  Relaxation and Reactivity of Singlet Oxygen , 1968 .

[10]  M. Kogoma,et al.  The mechanism of the stabilisation of glow plasma at atmospheric pressure , 1990 .

[11]  C. K. Maiti,et al.  TEOS‐based PECVD of silicon dioxide for VLSI applications , 1996 .

[12]  Shinichi Takagi,et al.  Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films , 1997 .

[13]  D. Dobuzinsky,et al.  Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films , 1990 .

[14]  J. Fontanella,et al.  Effect of OH− on the low‐frequency dielectric constant of vitreous silica , 1974 .

[15]  R. Scurlock,et al.  Chemical Reactivity of Singlet Sigma Oxygen (b1Σg+) in Solution , 1996 .

[16]  T. Kawahara,et al.  Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure , 1992 .

[17]  M. Maeda,et al.  Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone , 1996 .

[18]  A. Spitzer,et al.  Low‐pressure deposition of high‐quality SiO2 films by pyrolysis of tetraethylorthosilicate , 1987 .

[19]  Bryce Crawford,et al.  The Infra-red Spectra of Complex Molecules. , 1955 .

[20]  Hideomi Koinuma,et al.  Development and application of a microbeam plasma generator , 1992 .

[21]  S. Wiberley,et al.  Introduction to infrared and Raman spectroscopy , 1965 .

[22]  Paul A. Kohl,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures , 1995 .

[23]  Richard C. Lord,et al.  Introduction to Infrared and Raman Spectroscopy. , 1965 .