Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy

[1]  Tsunemoto Kuriyagawa,et al.  Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation , 2007 .

[2]  Jiwang Yan,et al.  Prediction of subsurface damage depth of ground brittle materials by surface profiling , 2007 .

[3]  N. Nickel,et al.  Laser crystallization of compensated hydrogenated amorphous silicon thin films , 2006 .

[4]  K. Shibahara,et al.  Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing , 2005 .

[5]  J. Patten,et al.  Nanoindentation tests on diamond-machined silicon wafers , 2005 .

[6]  Jiwang Yan Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates , 2004 .

[7]  L. Hanssen,et al.  Silicon as a standard material for infrared reflectance and transmittance from 2 to 5 μm , 2002 .

[8]  Tsunemoto Kuriyagawa,et al.  Ductile regime turning at large tool feed , 2002 .

[9]  Sabri Cetinkunt,et al.  Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon , 2001 .

[10]  R. Komanduri,et al.  On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications , 2001 .

[11]  Tong-Yi Zhang,et al.  Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers , 2000 .

[12]  Jaime Gilberto Duduch,et al.  Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering , 1999 .

[13]  Liangchi Zhang,et al.  Effect of ultraprecision grinding on the microstructural change in silicon monocrystals , 1998 .

[14]  A. E. Gee,et al.  Laterally resolved crystalline damage in single-point-diamond-turned silicon , 1996 .

[15]  E. Makino,et al.  Ductile-regime turning mechanism of single-crystal silicon , 1996 .

[16]  Needs,et al.  First-principles pseudopotential study of the structural phases of silicon. , 1995, Physical review. B, Condensed matter.

[17]  K. Kurihara,et al.  CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPE OBSERVATIONS OF DIAMOND-TURNED SINGLE-CRYSTAL SI SURFACES , 1994 .

[18]  E. Brinksmeier,et al.  Measurement of subsurface damage in silicon wafers , 1994 .

[19]  M. Hack,et al.  Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors , 1994 .

[20]  G. A. Prinz,et al.  Growth of fcc Fe films on diamond , 1994 .

[21]  Carles,et al.  Multiple-order Raman scattering in crystalline and amorphous silicon. , 1993, Physical review. B, Condensed matter.

[22]  Ronald O. Scattergood,et al.  Ductile‐Regime Machining of Germanium and Silicon , 1990 .

[23]  M. Paesler,et al.  Micro-Raman analysis of stress in machined silicon and germanium , 1988 .

[24]  Zafar Iqbal,et al.  Raman scattering from hydrogenated microcrystalline and amorphous silicon , 1982 .

[25]  L. Ley,et al.  The one phonon Raman spectrum in microcrystalline silicon , 1981 .

[26]  厨川 常元 Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers , 2005 .

[27]  Jiwang Yan,et al.  Fabrication of Large-Diameter Single-Crystal Silicon Aspheric Lens by Straight-Line Enveloping Diamond-Turning Method. , 2002 .

[28]  Jiwang Yan,et al.  Chip morphology of ultra-precision diamond turning of single crystal silicon , 1999 .

[29]  Koen De Munck,et al.  Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon , 1999 .

[30]  A. E. Gee,et al.  Transmission electron microscopy of nanomachined silicon crystals , 1994 .

[31]  Nakasuji Tomoaki,et al.  Diamond Turning of Brittle Materials for Optical Components , 1990 .

[32]  D. C. Harris,et al.  Symmetry and spectroscopy : an introduction to vibrational and electronic spectroscopy , 1989 .