Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy
暂无分享,去创建一个
[1] Tsunemoto Kuriyagawa,et al. Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation , 2007 .
[2] Jiwang Yan,et al. Prediction of subsurface damage depth of ground brittle materials by surface profiling , 2007 .
[3] N. Nickel,et al. Laser crystallization of compensated hydrogenated amorphous silicon thin films , 2006 .
[4] K. Shibahara,et al. Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing , 2005 .
[5] J. Patten,et al. Nanoindentation tests on diamond-machined silicon wafers , 2005 .
[6] Jiwang Yan. Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates , 2004 .
[7] L. Hanssen,et al. Silicon as a standard material for infrared reflectance and transmittance from 2 to 5 μm , 2002 .
[8] Tsunemoto Kuriyagawa,et al. Ductile regime turning at large tool feed , 2002 .
[9] Sabri Cetinkunt,et al. Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon , 2001 .
[10] R. Komanduri,et al. On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications , 2001 .
[11] Tong-Yi Zhang,et al. Micro-Raman Spectral Analysis of the Subsurface Damage Layer in Machined Silicon Wafers , 2000 .
[12] Jaime Gilberto Duduch,et al. Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering , 1999 .
[13] Liangchi Zhang,et al. Effect of ultraprecision grinding on the microstructural change in silicon monocrystals , 1998 .
[14] A. E. Gee,et al. Laterally resolved crystalline damage in single-point-diamond-turned silicon , 1996 .
[15] E. Makino,et al. Ductile-regime turning mechanism of single-crystal silicon , 1996 .
[16] Needs,et al. First-principles pseudopotential study of the structural phases of silicon. , 1995, Physical review. B, Condensed matter.
[17] K. Kurihara,et al. CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPE OBSERVATIONS OF DIAMOND-TURNED SINGLE-CRYSTAL SI SURFACES , 1994 .
[18] E. Brinksmeier,et al. Measurement of subsurface damage in silicon wafers , 1994 .
[19] M. Hack,et al. Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors , 1994 .
[20] G. A. Prinz,et al. Growth of fcc Fe films on diamond , 1994 .
[21] Carles,et al. Multiple-order Raman scattering in crystalline and amorphous silicon. , 1993, Physical review. B, Condensed matter.
[22] Ronald O. Scattergood,et al. Ductile‐Regime Machining of Germanium and Silicon , 1990 .
[23] M. Paesler,et al. Micro-Raman analysis of stress in machined silicon and germanium , 1988 .
[24] Zafar Iqbal,et al. Raman scattering from hydrogenated microcrystalline and amorphous silicon , 1982 .
[25] L. Ley,et al. The one phonon Raman spectrum in microcrystalline silicon , 1981 .
[26] 厨川 常元. Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers , 2005 .
[27] Jiwang Yan,et al. Fabrication of Large-Diameter Single-Crystal Silicon Aspheric Lens by Straight-Line Enveloping Diamond-Turning Method. , 2002 .
[28] Jiwang Yan,et al. Chip morphology of ultra-precision diamond turning of single crystal silicon , 1999 .
[29] Koen De Munck,et al. Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon , 1999 .
[30] A. E. Gee,et al. Transmission electron microscopy of nanomachined silicon crystals , 1994 .
[31] Nakasuji Tomoaki,et al. Diamond Turning of Brittle Materials for Optical Components , 1990 .
[32] D. C. Harris,et al. Symmetry and spectroscopy : an introduction to vibrational and electronic spectroscopy , 1989 .