High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region
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A. Fiore | S. Mikhrin | L. Occhi | M. Rossetti | A. Kovsh | C. Velez | S. Mikhrin | A. Kovsh | A. Fiore | M. Rossetti | L. Occhi | C. Velez | L. Li | L. Li
[1] Kenichi Iga,et al. High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region , 1999 .
[2] Dennis G. Deppe,et al. The role of p-type doping and the density of states on the modulation response of quantum dot lasers , 2002 .
[3] Sasan Fathpour,et al. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers , 2004 .
[4] Wei Zhou,et al. Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum , 1999 .
[5] H. Melchior,et al. High power superluminescent diodes for 1.3 /spl mu/m wavelengths , 1996 .
[6] A. Forchel,et al. Importance of Auger recombination in InAs 1.3 /spl mu/m quantum dot lasers , 2003 .
[7] Lorenzo Occhi,et al. Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers , 2005 .
[8] A. Fiore,et al. Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m , 2005, IEEE Photonics Technology Letters.
[9] D. Deppe,et al. Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region , 2002, IEEE Photonics Technology Letters.
[10] Yang Liu,et al. High-power integrated superluminescent light source , 2003 .
[11] Mitsuru Sugawara,et al. Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers , 2005 .
[12] Joseph M. Schmitt,et al. Optical coherence tomography (OCT): a review , 1999 .
[13] Il Ki Han,et al. High power broadband InGaAs/GaAs quantum dot superluminescent diodes , 2003 .
[14] Ching-Fuh Lin,et al. Extremely broadband AlGaAs/GaAs superluminescent diodes , 1997 .
[15] M. Rossetti,et al. Improved emission spectrum from quantum dot superluminescent light emitting diodes , 2006 .
[16] M. Hopkinson,et al. Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells , 2005, IEEE Photonics Technology Letters.
[17] M. Hopkinson,et al. The effect of p doping in InAs quantum dot lasers , 2006 .