0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date.< >