Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2

The authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2 with four-probe scanning tunneling microscopy. The monolayer MoS2 domains are synthesized by chemical vapor deposition on SiO2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carrier density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics....

[1]  P. Feng,et al.  Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing , 2014 .

[2]  Takhee Lee,et al.  Irradiation effects of high-energy proton beams on MoS2 field effect transistors. , 2014, ACS nano.

[3]  F. Xia,et al.  Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition , 2014, Nature Communications.

[4]  F. Miao,et al.  Hopping transport through defect-induced localized states in molybdenum disulphide , 2013, Nature Communications.

[5]  An-Ping Li,et al.  Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene. , 2013, ACS nano.

[6]  Simon Kurasch,et al.  From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation , 2013 .

[7]  A. Baddorf,et al.  Electron Transport at the Nanometer‐Scale Spatially Revealed by Four‐Probe Scanning Tunneling Microscopy , 2013 .

[8]  Jing Kong,et al.  Intrinsic structural defects in monolayer molybdenum disulfide. , 2013, Nano letters.

[9]  J. Grossman,et al.  Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. , 2013, Nano letters.

[10]  Xinran Wang,et al.  Top–down fabrication of sub-nanometre semiconducting nanoribbons derived from molybdenum disulfide sheets , 2013, Nature Communications.

[11]  L. Lauhon,et al.  Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors , 2013, 1304.5567.

[12]  P. Caroff,et al.  Persistent enhancement of the carrier density in electron irradiated InAs nanowires , 2013, Nanotechnology.

[13]  P. Ajayan,et al.  Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. , 2013, Nano letters.

[14]  B. Radisavljevic,et al.  Mobility engineering and a metal-insulator transition in monolayer MoS₂. , 2013, Nature materials.

[15]  Jun Lou,et al.  Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. , 2013, Nature materials.

[16]  Timothy C. Berkelbach,et al.  Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. , 2013, Nature materials.

[17]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[18]  Xiaolong Zou,et al.  Predicting dislocations and grain boundaries in two-dimensional metal-disulfides from the first principles. , 2013, Nano letters.

[19]  G. A. Magel,et al.  Enhanced material purity and resolution via synchronized laser assisted electron beam induced deposition of platinum. , 2013, Nanoscale.

[20]  T. Venkatesan,et al.  Magnetism in MoS2 induced by proton irradiation , 2012, 1209.3569.

[21]  Simon Kurasch,et al.  Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. , 2012, Physical review letters.

[22]  An-Ping Li,et al.  Nanomanipulation and nanofabrication with multi-probe scanning tunneling microscope: from individual atoms to nanowires. , 2012, The Review of scientific instruments.

[23]  Arindam Ghosh,et al.  Nature of electronic states in atomically thin MoS₂ field-effect transistors. , 2011, ACS nano.

[24]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[25]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[26]  C. W. Hagen,et al.  Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective , 2009, Nanotechnology.

[27]  Wenzhi Li,et al.  A cryogenic Quadraprobe scanning tunneling microscope system with fabrication capability for nanotransport research. , 2007, The Review of scientific instruments.

[28]  M. Malac,et al.  Radiation damage in the TEM and SEM. , 2004, Micron.

[29]  A. Saúl,et al.  Scanning tunneling microscopy chemical signature of point defects on the MoS2(0001) surface. , 2004, Physical review letters.

[30]  Robert A. Street,et al.  Carrier transport and density of state distributions in pentacene transistors , 2002 .

[31]  Gilles Horowitz,et al.  Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors , 2000 .