论文信息 - Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations - 字舞流文

Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

H. Tsuchida | I. Kamata | Y. Sugawara | K. Nakayama | Tomonori Nakamura | R. Ishii | Toshiyuki Miyanagi