Low-temperature, low-frequency complex conductance measurements for a barely insulating Si:As sample

Recently Bhatt (1985) has predicted that for a non-interacting disordered insulator the low-frequency dielectric response should diverge at low temperatures (but at temperatures larger than the Coulomb gap) as T-14/. Low-temperature data are presented for an uncompensated Si:As sample (n approximately 0.87 nc) which does not appear to support this prediction even though the DC and 10 Hz data exhibit Mott variable-range hopping conduction. An alternative analysis is presented which suggests the temperature dependence of epsilon '( omega ,T) is very similar to sigma ( omega ,T) for the sub-linear frequency-dependent phonon-assisted hopping process.

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