Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H

▪ Abstract Hydrogenated amorphous silicon (a-Si:H) exhibits a metastable light-induced degradation of its optoelectronic properties that is called the Staebler-Wronski effect, after its discoverers...

[1]  C. Walle Chapter 6 - Hydrogen Interactions with Polycrystalline and Amorphous Silicon—Theory , 1999 .

[2]  H. Fritzsche,et al.  Stress and internal friction associated with light-induced structural changes of a-Si:H deposited on crystalline silicon microcantilevers , 2000 .

[3]  H. M. Wentinck,et al.  Single and double carrier injection in A-Si:H , 1984 .

[4]  S. Guha,et al.  Amorphous silicon alloy materials and solar cells near the threshold of microcrystallinity , 1999 .

[5]  M. Stutzmann,et al.  Excitons and light‐induced degradation of amorphous hydrogenated silicon , 1991 .

[6]  M. Stutzmann,et al.  Accelerated stability test for amorphous silicon solar cells , 1992 .

[7]  Reimer,et al.  Hydrogen microstructure in amorphous hydrogenated silicon. , 1987, Physical review. B, Condensed matter.

[8]  B. Schröder,et al.  METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS SILICON (a-Si:H) PRODUCED BY ELECTRON IRRADIATION , 1989 .

[9]  Jackson,et al.  Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.

[10]  A. Asano Slow structural transitions of hydrogen in hydrogenated amorphous silicon during low temperature annealing , 1991 .

[11]  R. Crandall,et al.  Molecular hydrogen in amorphous silicon revisited , 2000 .

[12]  T. Umeda,et al.  Microscopic nature of localized states in a-Si:H and their role in metastability , 1998 .

[13]  Schiff,et al.  Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon. , 1989, Physical review. B, Condensed matter.

[14]  W. Beyer Chapter 5 – Hydrogen Phenomena in Hydrogenated Amorphous Silicon , 1999 .

[15]  S. Yamasaki,et al.  Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon , 1994 .

[16]  Robert A. Street,et al.  Technology and Applications of Amorphous Silicon , 2000 .

[17]  S. K. Deb,et al.  Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature , 2000 .

[18]  Robert A. Street,et al.  Hydrogen diffusion in amorphous silicon , 1987 .

[19]  Winer,et al.  Defect equilibria in undoped a-Si:H. , 1989, Physical review. B, Condensed matter.

[20]  M. Stutzmann Light‐induced defect creation in amorphous silicon: Single carrier versus excitonic mechanisms , 1990 .

[21]  H. Branz The hydrogen collision model: theory and experiment , 2000 .

[22]  E. Davis Hydrogen in silicon , 1996 .

[23]  Z. A. Munir,et al.  Evaporation of KC1 crystals in the presence of a.c. and d.c. fields , 1987 .

[24]  P. Taylor Chapter 3 Magnetic Resonance Measurements in a-Si:H , 1984 .

[25]  H. Fritzsche,et al.  Temperature dependence of creation and annealing of light-induced metastable defects in a-Si:H , 1993 .

[26]  R. Street,et al.  Saturation and recovery kinetics of current-induced defects in a-Si:H , 1991 .

[27]  Xiao Liu,et al.  Structural origin of bulk molecular hydrogen in hydrogenated amorphous silicon , 1999 .

[28]  M. Kumeda,et al.  Recovery Process for Light-Soaked A-Si:H , 1994 .

[29]  S. Wagner,et al.  A comprehensive defect model for amorphous silicon , 1992 .

[30]  S. Wagner,et al.  Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination , 1993 .

[31]  B. Schröder,et al.  Saturation effect and annealing behaviour of metastable defects induced by keV-electron irradiation in intrinsic a-Si:H , 1989 .

[32]  S. Pantelides Native defects and diffusion in amorphous silicon -- a revisit , 1992 .

[33]  G. Yue,et al.  Light-Excited Structural Instability of a-Si:H , 1998 .

[34]  J. Pankove,et al.  Hydrogen in semiconductors , 1991 .

[35]  Robert W. Collins,et al.  EVOLUTIONARY PHASE DIAGRAMS FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS FROM HYDROGEN-DILUTED SILANE , 1999 .

[36]  Don L. Williamson,et al.  Structural changes in a-Si:H film crystallinity with high H dilution , 2000 .

[37]  T. Gotoh,et al.  Photoinduced expansion in hydrogenated amorphous silicon , 1999 .

[38]  S. Guha,et al.  Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity , 1999 .

[39]  Subhendu Guha,et al.  Multijunction Solar Cells and Modules , 2000 .

[40]  T. Gotoh,et al.  The light-induced metastable lattice expansion in hydrogenated amorphous silicon , 2000 .

[41]  S. Guha,et al.  Improved stability against light exposure in amorphous deuterated silicon alloy solar cell , 1997 .

[42]  R. Street HYDROGEN DIFFUSION AND ELECTRONIC METASTABILITY IN AMORPHOUS SILICON , 1991 .

[43]  Jackson Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon. , 1990, Physical review. B, Condensed matter.

[44]  N. Hata,et al.  Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon , 1996 .

[45]  K. Zellama,et al.  Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study , 1981 .

[46]  H. Fritzsche,et al.  Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .

[47]  Rana Biswas,et al.  Hydrogen Flip Model for Light-Induced Changes of Amorphous Silicon , 1999 .

[48]  D. Adler Origin of the photo-induced changes in hydrogenated amorphous silicon , 1983 .

[49]  H. Fritzsche,et al.  Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity , 1983 .

[50]  S. Hudgens,et al.  On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys , 1983 .

[51]  Xiao Liu,et al.  Low temperature internal friction study of light-induced structural instability in hydrogenated amorphous silicon , 2000 .

[52]  S. Wagner,et al.  Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon , 1988 .

[53]  Zhang,et al.  Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si. , 1990, Physical review letters.

[54]  J. Reimer,et al.  Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen films , 1981 .

[55]  Brandt,et al.  Pulsed-light soaking of hydrogenated amorphous silicon. , 1994, Physical review. B, Condensed matter.

[56]  N. Hata,et al.  Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon , 1993 .

[57]  D. Redfield,et al.  Reinterpretation of degradation kinetics of amorphous silicon , 1989 .

[58]  J. Stuke,et al.  Light‐induced dangling bonds in hydrogenated amorphous silicon , 1981 .

[59]  H. Fritzsche,et al.  Some observations on the photoconductivity of amorphous semiconductors , 1992 .

[60]  Isaac Balberg,et al.  Deposition of device quality, low H content amorphous silicon , 1991 .

[61]  H. Okamoto,et al.  Photoinduced Structural Changes in Hydrogenated Amorphous Silicon , 1998 .

[62]  W. B. Jackson,et al.  Comment on ‘‘Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing’’ [Appl. Phys. Lett. 68, 2526 (1996)] , 1996 .

[63]  J. Kakalios Chapter 12 Hydrogen Diffusion in Amorphous Silicon , 1991 .

[64]  D. Staebler,et al.  Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .

[65]  Tanaka,et al.  Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon. , 1993, Physical review. B, Condensed matter.

[66]  S. Yamasaki,et al.  Control of photodegradation in amorphous silicon: The effect of deuterium , 1991 .

[67]  Stanford R. Ovshinsky,et al.  The material basis of efficiency and stability in amorphous photovoltaics , 1994 .

[68]  S. Guha,et al.  Defect bands in a-Si–Ge:H alloys with low Ge content , 2000 .

[69]  D. Redfield Kinetics, energetics, and origins of defects in amorphous Si:H , 1988 .

[70]  Pantelides Defects in amorphous silicon: A new perspective. , 1986, Physical review letters.

[71]  A. Matsuda,et al.  A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination , 2000 .

[72]  M. Stutzmann,et al.  Spin-dependent processes in amorphous and microcrystalline silicon: a survey , 2000 .

[73]  Yiping,et al.  Evidence for Light-Induced Increase of Si-H Bonds in Undoped a-Si:H. , 1995, Physical review letters.

[74]  H. Fritzsche,et al.  Search for Explaining the Staebler-Wronski Effect , 1997 .

[75]  Tsai,et al.  Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.

[76]  Tsai,et al.  Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.

[77]  Tatsuo Shimizu,et al.  Light-induced effects and stability in a-Si:H and related alloys , 1993 .

[78]  Stanford R. Ovshinsky,et al.  Amorphous Silicon Alloy Solar Cells Near the Threshold of Amorphous-to-Microcrystalline Transition , 2000 .

[79]  B. Schröder,et al.  Deposition of device quality a-Si:H films with the hot-wire technique , 1993 .

[80]  Wu,et al.  Hydrogen dynamics in a-Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relation. , 1991, Physical review. B, Condensed matter.

[81]  Schiff,et al.  Hydrogen and defects in amorphous silicon. , 1991, Physical review letters.

[82]  S. Nitta,et al.  New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon , 1980 .

[83]  H. Branz Hydrogen diffusion and mobile hydrogen in amorphous silicon , 1999 .

[84]  Jackson,et al.  Mechanisms of thermal equilibration in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.

[85]  R. Street,et al.  Hydrogenated amorphous silicon: Index , 1991 .

[86]  K. Morigaki Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H , 1988 .

[87]  Xiao Liu,et al.  Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon , 1999 .

[88]  Bicai Pan,et al.  Mechanism for hydrogen diffusion in amorphous silicon , 1998 .

[89]  H. Fritzsche,et al.  Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon , 1995 .

[90]  H. Branz HYDROGEN COLLISION MODEL : QUANTITATIVE DESCRIPTION OF METASTABILITY IN AMORPHOUS SILICON , 1999 .

[91]  M. Stutzmann,et al.  An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method , 1994 .

[92]  Meaudre Influence of illumination during annealing of quenched defects in undoped amorphous silicon. , 1992, Physical review. B, Condensed matter.

[93]  Stanford R. Ovshinsky,et al.  Effect of hydrogen dilution on the structure of amorphous silicon alloys , 1997 .

[94]  J. B. Adams,et al.  Energetics of hydrogen in amorphous silicon: An ab initio study , 1998 .

[95]  S. Wagner,et al.  Light-induced D diffusion measurements in hydrogenated amorphous silicon: testing H metastability models , 1999 .