Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H
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[1] C. Walle. Chapter 6 - Hydrogen Interactions with Polycrystalline and Amorphous Silicon—Theory , 1999 .
[2] H. Fritzsche,et al. Stress and internal friction associated with light-induced structural changes of a-Si:H deposited on crystalline silicon microcantilevers , 2000 .
[3] H. M. Wentinck,et al. Single and double carrier injection in A-Si:H , 1984 .
[4] S. Guha,et al. Amorphous silicon alloy materials and solar cells near the threshold of microcrystallinity , 1999 .
[5] M. Stutzmann,et al. Excitons and light‐induced degradation of amorphous hydrogenated silicon , 1991 .
[6] M. Stutzmann,et al. Accelerated stability test for amorphous silicon solar cells , 1992 .
[7] Reimer,et al. Hydrogen microstructure in amorphous hydrogenated silicon. , 1987, Physical review. B, Condensed matter.
[8] B. Schröder,et al. METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS SILICON (a-Si:H) PRODUCED BY ELECTRON IRRADIATION , 1989 .
[9] Jackson,et al. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.
[10] A. Asano. Slow structural transitions of hydrogen in hydrogenated amorphous silicon during low temperature annealing , 1991 .
[11] R. Crandall,et al. Molecular hydrogen in amorphous silicon revisited , 2000 .
[12] T. Umeda,et al. Microscopic nature of localized states in a-Si:H and their role in metastability , 1998 .
[13] Schiff,et al. Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon. , 1989, Physical review. B, Condensed matter.
[14] W. Beyer. Chapter 5 – Hydrogen Phenomena in Hydrogenated Amorphous Silicon , 1999 .
[15] S. Yamasaki,et al. Time-domain measurements of spin relaxation processes of dangling-bond defects in hydrogenated amorphous silicon , 1994 .
[16] Robert A. Street,et al. Technology and Applications of Amorphous Silicon , 2000 .
[17] S. K. Deb,et al. Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature , 2000 .
[18] Robert A. Street,et al. Hydrogen diffusion in amorphous silicon , 1987 .
[19] Winer,et al. Defect equilibria in undoped a-Si:H. , 1989, Physical review. B, Condensed matter.
[20] M. Stutzmann. Light‐induced defect creation in amorphous silicon: Single carrier versus excitonic mechanisms , 1990 .
[21] H. Branz. The hydrogen collision model: theory and experiment , 2000 .
[22] E. Davis. Hydrogen in silicon , 1996 .
[23] Z. A. Munir,et al. Evaporation of KC1 crystals in the presence of a.c. and d.c. fields , 1987 .
[24] P. Taylor. Chapter 3 Magnetic Resonance Measurements in a-Si:H , 1984 .
[25] H. Fritzsche,et al. Temperature dependence of creation and annealing of light-induced metastable defects in a-Si:H , 1993 .
[26] R. Street,et al. Saturation and recovery kinetics of current-induced defects in a-Si:H , 1991 .
[27] Xiao Liu,et al. Structural origin of bulk molecular hydrogen in hydrogenated amorphous silicon , 1999 .
[28] M. Kumeda,et al. Recovery Process for Light-Soaked A-Si:H , 1994 .
[29] S. Wagner,et al. A comprehensive defect model for amorphous silicon , 1992 .
[30] S. Wagner,et al. Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination , 1993 .
[31] B. Schröder,et al. Saturation effect and annealing behaviour of metastable defects induced by keV-electron irradiation in intrinsic a-Si:H , 1989 .
[32] S. Pantelides. Native defects and diffusion in amorphous silicon -- a revisit , 1992 .
[33] G. Yue,et al. Light-Excited Structural Instability of a-Si:H , 1998 .
[34] J. Pankove,et al. Hydrogen in semiconductors , 1991 .
[35] Robert W. Collins,et al. EVOLUTIONARY PHASE DIAGRAMS FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS FROM HYDROGEN-DILUTED SILANE , 1999 .
[36] Don L. Williamson,et al. Structural changes in a-Si:H film crystallinity with high H dilution , 2000 .
[37] T. Gotoh,et al. Photoinduced expansion in hydrogenated amorphous silicon , 1999 .
[38] S. Guha,et al. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity , 1999 .
[39] Subhendu Guha,et al. Multijunction Solar Cells and Modules , 2000 .
[40] T. Gotoh,et al. The light-induced metastable lattice expansion in hydrogenated amorphous silicon , 2000 .
[41] S. Guha,et al. Improved stability against light exposure in amorphous deuterated silicon alloy solar cell , 1997 .
[42] R. Street. HYDROGEN DIFFUSION AND ELECTRONIC METASTABILITY IN AMORPHOUS SILICON , 1991 .
[43] Jackson. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon. , 1990, Physical review. B, Condensed matter.
[44] N. Hata,et al. Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon , 1996 .
[45] K. Zellama,et al. Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study , 1981 .
[46] H. Fritzsche,et al. Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .
[47] Rana Biswas,et al. Hydrogen Flip Model for Light-Induced Changes of Amorphous Silicon , 1999 .
[48] D. Adler. Origin of the photo-induced changes in hydrogenated amorphous silicon , 1983 .
[49] H. Fritzsche,et al. Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity , 1983 .
[50] S. Hudgens,et al. On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys , 1983 .
[51] Xiao Liu,et al. Low temperature internal friction study of light-induced structural instability in hydrogenated amorphous silicon , 2000 .
[52] S. Wagner,et al. Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon , 1988 .
[53] Zhang,et al. Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si. , 1990, Physical review letters.
[54] J. Reimer,et al. Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen films , 1981 .
[55] Brandt,et al. Pulsed-light soaking of hydrogenated amorphous silicon. , 1994, Physical review. B, Condensed matter.
[56] N. Hata,et al. Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon , 1993 .
[57] D. Redfield,et al. Reinterpretation of degradation kinetics of amorphous silicon , 1989 .
[58] J. Stuke,et al. Light‐induced dangling bonds in hydrogenated amorphous silicon , 1981 .
[59] H. Fritzsche,et al. Some observations on the photoconductivity of amorphous semiconductors , 1992 .
[60] Isaac Balberg,et al. Deposition of device quality, low H content amorphous silicon , 1991 .
[61] H. Okamoto,et al. Photoinduced Structural Changes in Hydrogenated Amorphous Silicon , 1998 .
[62] W. B. Jackson,et al. Comment on ‘‘Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing’’ [Appl. Phys. Lett. 68, 2526 (1996)] , 1996 .
[63] J. Kakalios. Chapter 12 Hydrogen Diffusion in Amorphous Silicon , 1991 .
[64] D. Staebler,et al. Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .
[65] Tanaka,et al. Electron-spin-echo envelope-modulation study of the distance between dangling bonds and hydrogen atoms in hydrogenated amorphous silicon. , 1993, Physical review. B, Condensed matter.
[66] S. Yamasaki,et al. Control of photodegradation in amorphous silicon: The effect of deuterium , 1991 .
[67] Stanford R. Ovshinsky,et al. The material basis of efficiency and stability in amorphous photovoltaics , 1994 .
[68] S. Guha,et al. Defect bands in a-Si–Ge:H alloys with low Ge content , 2000 .
[69] D. Redfield. Kinetics, energetics, and origins of defects in amorphous Si:H , 1988 .
[70] Pantelides. Defects in amorphous silicon: A new perspective. , 1986, Physical review letters.
[71] A. Matsuda,et al. A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination , 2000 .
[72] M. Stutzmann,et al. Spin-dependent processes in amorphous and microcrystalline silicon: a survey , 2000 .
[73] Yiping,et al. Evidence for Light-Induced Increase of Si-H Bonds in Undoped a-Si:H. , 1995, Physical review letters.
[74] H. Fritzsche,et al. Search for Explaining the Staebler-Wronski Effect , 1997 .
[75] Tsai,et al. Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.
[76] Tsai,et al. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.
[77] Tatsuo Shimizu,et al. Light-induced effects and stability in a-Si:H and related alloys , 1993 .
[78] Stanford R. Ovshinsky,et al. Amorphous Silicon Alloy Solar Cells Near the Threshold of Amorphous-to-Microcrystalline Transition , 2000 .
[79] B. Schröder,et al. Deposition of device quality a-Si:H films with the hot-wire technique , 1993 .
[80] Wu,et al. Hydrogen dynamics in a-Si:H: Multiple trapping, structural relaxation, and the Meyer-Neldel relation. , 1991, Physical review. B, Condensed matter.
[81] Schiff,et al. Hydrogen and defects in amorphous silicon. , 1991, Physical review letters.
[82] S. Nitta,et al. New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon , 1980 .
[83] H. Branz. Hydrogen diffusion and mobile hydrogen in amorphous silicon , 1999 .
[84] Jackson,et al. Mechanisms of thermal equilibration in doped amorphous silicon. , 1988, Physical review. B, Condensed matter.
[85] R. Street,et al. Hydrogenated amorphous silicon: Index , 1991 .
[86] K. Morigaki. Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H , 1988 .
[87] Xiao Liu,et al. Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon , 1999 .
[88] Bicai Pan,et al. Mechanism for hydrogen diffusion in amorphous silicon , 1998 .
[89] H. Fritzsche,et al. Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon , 1995 .
[90] H. Branz. HYDROGEN COLLISION MODEL : QUANTITATIVE DESCRIPTION OF METASTABILITY IN AMORPHOUS SILICON , 1999 .
[91] M. Stutzmann,et al. An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method , 1994 .
[92] Meaudre. Influence of illumination during annealing of quenched defects in undoped amorphous silicon. , 1992, Physical review. B, Condensed matter.
[93] Stanford R. Ovshinsky,et al. Effect of hydrogen dilution on the structure of amorphous silicon alloys , 1997 .
[94] J. B. Adams,et al. Energetics of hydrogen in amorphous silicon: An ab initio study , 1998 .
[95] S. Wagner,et al. Light-induced D diffusion measurements in hydrogenated amorphous silicon: testing H metastability models , 1999 .