Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations
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N. A. Poklonski | C. Nguyen | N. Hieu | Huynh V. Phuc | B. D. Hoi | V. Ilyasov | Nguyen V. Hieu | T. V. Thu | N. M. Hung | N. Poklonski | Bui D. Hoi