AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

This letter reports on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high-resistive silicon substrate with a record maximum oscillation cutoff frequency <i>F</i><sub>MAX</sub>. Double-T-shaped gates are associated with an optimized technology to enable high-efficiency 2-D electron gas control while mitigating the parasitic resistances. Good results ogate-length HEMTf <i>F</i><sub>MAX</sub> = 206 GHz and <i>FT</i> = 100 GHz are obtained for a 90-nm gate-length HEMT with 0.25-μm source-to-gate spacing. The associated peak extrinsic transconductance value is as high as 440 mS·mm<sup>-1</sup>. To the authors' knowledge, the obtained <i>F</i><sub>MAX</sub> and <i>Gm</i><sub>ext</sub> are the highest reported values for GaN HEMTs technology on silicon substrate. The accuracy of the cutoff frequency values is checked by small-signal modeling based on extracted S-parameters.

[1]  A. Kurdoghlian,et al.  GaN HFET for W-band Power Applications , 2006, 2006 International Electron Devices Meeting.

[2]  L. J. Giacoletto.  Diode and transistor equivalent circuits for transient operation , 1969 .

[3]  G. Kompa,et al.  A new small signal model parameter extraction method applied to GaN devices , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[4]  Satoshi Masuda,et al.  E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[5]  A. Caddemi,et al.  Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs , 2006, IEEE Transactions on Microwave Theory and Techniques.

[6]  S. Hiyamizu,et al.  Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[7]  Haifeng Sun,et al.  107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies , 2010, IEEE Electron Device Letters.

[8]  Y. Mancuso,et al.  Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[9]  S. Keller,et al.  High-power AlGaN/GaN HEMTs for Ka-band applications , 2005, IEEE Electron Device Letters.

[10]  W. E. Hoke,et al.  AlGaN/GaN HEMT With 300-GHz $f_{\max}$ , 2010, IEEE Electron Device Letters.

[11]  W. E. Hoke,et al.  AlGaN/GaN HEMT With 300-GHz $f_{\max}$ , 2010 .