Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon
暂无分享,去创建一个
[1] E. Yakimov,et al. Electron-beam-induced-current study of defects in GaN; experiments and simulation , 2002 .
[2] Sebania Libertino,et al. Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si , 2001 .
[3] E. Yakimov,et al. Interaction of gold with dislocations in silicon , 2000 .
[4] M. Kittler,et al. Recombination activity of “clean” and contaminated misfit dislocations in Si(Ge) structures , 1994 .
[5] Weber,et al. Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations of p- and n-doped silicon. , 1991, Physical review. B, Condensed matter.
[6] E. Yakimov,et al. EBIC Investigastion of the Electrical Activity of Dislocations with Different Impurity Atmospheres in Si , 1990 .
[7] P. Werner,et al. Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold , 1987 .
[8] H. Blumtritt,et al. Recombination properties of dislocation slip planes , 1986 .
[9] E. Yakimov,et al. The Electrical Activity of Dislocation Slip Planes in Semiconductor Crystals , 1986 .
[10] E. Yakimov,et al. On the real structure of monocrystalline silicon near dislocation slip planes , 1981 .
[11] C. Donolato. A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity , 1992 .