A Solution to Press-Pack Packaging of SiC MOSFETS

This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution of implementing press-pack packaging on SiC MOSFETs to extend the application of SiC devices into the high power range. The challenges in realizing press-pack packaging of SiC MOSFETs are addressed, and the solutions are proposed that fit the specific requirements of SiC MOSFET. To achieve pressure contact on SiC MOSFETs, miniature and flexible press pins called “fuzz buttons” are used in a low-profile interposer to realize die top side connection. Since the press-pack does not provide internal insulation between the active device and the heatsink, the heatsink is included in the power loop. To avoid large parasitic loop inductance being introduced by the heatsinks, a microchannel heatsink is developed which has a low thickness while remaining adequate heat dissipation efficiency. The structure and assembly process flow of the press-pack SiC MOSFET are provided. A half-bridge stack prototype with two press-packs and three heatsinks is developed. The thermal and electrical performances of the press-pack and the half-bridge stack are evaluated by simulations and tests to validate the feasibility of the proposed packaging approach.

[1]  Xu Yang,et al.  A Hybrid Integrated Power Electronic Module Based On Pressure Contact Technology , 2006 .

[2]  Jianjing Wang,et al.  Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance , 2013, IEEE Transactions on Power Electronics.

[3]  S. Kaufmann,et al.  Innovative press pack modules for high power IGBTs , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[4]  F. J. Wakeman,et al.  Electromechanical evaluation of a bondless pressure contact IGBT , 2001 .

[5]  Philippe Ladoux,et al.  On the Potential of IGCTs in HVDC , 2015, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[6]  J. Lutz,et al.  Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .

[7]  M. Davies,et al.  Pressure contact IGBT, the ideal switch for high power applications , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[8]  Franz Bechtold,et al.  A comprehensive overview on today's ceramic substrate technologies , 2009, 2009 European Microelectronics and Packaging Conference.

[9]  S. Kicin,et al.  Low-Voltage AC Drive Based on Double-Sided Cooled IGBT Press-Pack Modules , 2012, IEEE Transactions on Industry Applications.

[10]  William W. Sheng,et al.  Power Electronic Modules: Design and Manufacture , 2004 .

[11]  D. Schneider,et al.  On the operation of a press pack IGBT module under short circuit conditions , 2006, IEEE Transactions on Advanced Packaging.

[12]  F. Wakeman,et al.  Application of press-pack IGBTs in traction refurbishment , 2005, Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005..

[13]  Dehong Xu,et al.  Design and evaluation of press-pack SiC MOSFET , 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[14]  Runtao Ning,et al.  Modeling and Analysis of SiC MOSFET Switching Oscillations , 2016, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[15]  A. Ostmann,et al.  Packaging Very Fast Switching Semiconductors , 2014 .

[16]  Fan Zhang,et al.  Development of a 10kV solid-state DC circuit breaker based on press-pack IGBT for VSC-HVDC system , 2016, 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).

[17]  S. Bai,et al.  Fluid flow and heat transfer characteristics of liquid cooling microchannels in LTCC multilayered packaging substrate , 2015 .

[18]  Mo Al-akayshee,et al.  An 8 MW, 3-level inverter drive based on press-pack IGBTs , 2016 .

[19]  R. Jakob,et al.  3-Level high power converter with press pack IGBT , 2007, 2007 European Conference on Power Electronics and Applications.

[20]  Li Ran,et al.  An initial consideration of silicon carbide devices in pressure-packages , 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

[21]  Toshihiko Hayashi,et al.  4H-SiC high power SIJFET module , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

[22]  D. Carter,et al.  'Fuzz Button' interconnects at microwave and mm-wave frequencies , 2000 .

[23]  R. Jakob,et al.  New medium-voltage inverter design with very high power density , 2008, 2008 IEEE Power Electronics Specialists Conference.

[24]  Arman Hassanpoor,et al.  Technical assessment of load commutation switch in hybrid HVDC breaker , 2015, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

[25]  Fei Wang,et al.  Pressure Contact Packaging for Hybrid Electric Vehicle Drive , 2007, 2007 IEEE Power Electronics Specialists Conference.

[26]  Philippe Godignon,et al.  Enhanced power cycling capability of SiC Schottky diodes using press pack contacts , 2012, Microelectron. Reliab..

[27]  Toshihiko Hayashi,et al.  3 kV 600 A 4H-SiC high temperature diode module , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[28]  H. Mantooth,et al.  A silicon carbide fault current limiter for distribution systems , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[29]  H. Alan Mantooth,et al.  Datasheet Driven Silicon Carbide Power MOSFET Model , 2014, IEEE Transactions on Power Electronics.

[30]  Y. Seki,et al.  2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) , 1996 .

[31]  Wei Shi,et al.  Design and testing of the World's first single-level press-pack IGBT based submodule for MMC VSC HVDC applications , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

[32]  Toshii Corpration,et al.  PRESSURE CONTACT ASSEMBLY TECHNOLOGY OF HIGH POWER DEVICES , 1997 .

[33]  Philip Bill,et al.  Novel press pack IGBT device and switch assembly for Pulse Modulators , 2011, 2011 IEEE Pulsed Power Conference.

[34]  P.O. Jeannin,et al.  Study and realization of a low force 3D press-pack power module , 2008, 2008 IEEE Power Electronics Specialists Conference.

[35]  Abb Switzerland.  4.5kV Press Pack IGBT Designed for Ruggedness and Reliability , 2004 .