First Principles Calculation of Strain Effects on the Density of Interface States in 4H-SiC

[1]  K. Shiraishi,et al.  Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000 1 ¯ ), and (1 1 ¯ 00) surfaces , 2019, Japanese Journal of Applied Physics.

[2]  K. Kita,et al.  Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy , 2017 .

[3]  L. Feldman,et al.  Oxidation induced stress in SiO2/SiC structures , 2017 .

[4]  Heiji Watanabe,et al.  Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties , 2016 .

[5]  Shunqing Wu,et al.  Hybrid functional studies on the optical and electronic properties of graphane and silicane , 2015 .

[6]  T. Kimoto.  Material science and device physics in SiC technology for high-voltage power devices , 2015 .

[7]  Georg Kresse,et al.  The Perdew-Burke-Ernzerhof exchange-correlation functional applied to the G2-1 test set using a plane-wave basis set. , 2005, The Journal of chemical physics.

[8]  G. Makov,et al.  Density functional theory: An introduction , 1998, physics/9806013.

[9]  Burke,et al.  Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.

[10]  Kresse,et al.  Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.

[11]  J. Ao,et al.  Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure , 2019, Journal of Crystal Growth.

[12]  Sushil Auluck,et al.  A First-Principles Study of Structure-Property Correlation and the Origin of Ferrimagnetism in Gallium Ferrite , 2012 .