论文信息 - InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region - 字舞流文

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

T. Hashizume | Z. Fogarassy | M. Blaho | J. Kuzmík | D. Gregušová | R. Stoklas | S. Hasenöhrl | B. Pécz | S. Hascik | I. Cora | Tatsuya Oyobiki | L. Tóth | A. Laurenčíková | O. Pohorelec | A. Seifertová | Š. Haščík